STU10NA50 n - channel enhancement mode fast power mos transistor preliminary data n typical r ds(on) = 0.5 w n 30v gate to source voltage rating n repetitive avalanche tested n low intrinsic capacitance n 100% avalanche tested n gate charge minimized n reduced threshold voltage spread description the max220 tm package is a new high volume power package exibiting the same footprint as the industry standard to-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. the increased die capacity makes the device ideal to reduce component count in multiple paralleled to-220 designs and save board space with respect to larger packages. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies (ups) internal schematic diagram type v dss r ds(on) i d STU10NA50 500 v < 0.6 w 10.2 a october 1997 1 2 3 max220 tm absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain- gate voltage (r gs = 20 k w ) 500 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 10.2 a i d drain current (continuous) at t c = 100 o c 6.4 a i dm ( ) drain current (pulsed) 40.8 a p tot total dissipation at t c = 25 o c 145 w derating factor 1.16 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area 1/5
thermal data r thj-case rthj-amb r thc-sink t i thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.86 30 0.1 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 10.2 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 520 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 24 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 6.8 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 100 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10 v i d = 5 a v gs = 10 v i d = 5 a t c = 100 o c 0.5 0.6 1.2 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 10.2 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 5 a 6 9 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1750 250 80 2500 370 130 pf pf pf STU10NA50 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 250 v i d =5 a r g = 4.7 w v gs = 10 v 20 32 28 45 ns ns (di/dt) on turn-on current slope v dd = 400 v i d = 10 a r g = 47 w v gs = 10 v 190 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v i d = 10 a v gs = 10 v 80 12 37 110 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 400 v i d = 10 a r g = 4.7 w v gs = 10 v 16 12 30 22 18 42 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 10.2 40.8 a a v sd ( * ) forward on voltage i sd = 10 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 600 10.2 34 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STU10NA50 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.2 2.4 0.087 0.094 a2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 d 15.9 16.3 0.626 0.641 d1 9 9.35 0.354 0.368 d2 0.8 1.2 0.031 0.047 d3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 a a2 a1 c d3 d1 d2 d b1 b2 b e l l1 e p011r max220 mechanical data STU10NA50 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . STU10NA50 5/5
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